Aluminium nitride - Import export

Aluminum Nitride Ceramic Thermal Pads Regular Size: For Package Type: TO-3P/TO-220/TO-247/TO-264/TO-3/TO-254/TO-257/TO-258, With Hole or Without Hole. TO-3P 25x20x1mm (other thickness is available, too); TO-220 20x14x1mm (other thickness is available, too); TO-247 22x17x0.635mm (other thickness is available, too); TO-264 28x22x1mm (other thickness is available, too); TO-3 39.7×26.67x1mm (Rhombus shape); TO-254 34x24x1mm (other thickness is available, too); TO-257 40x28x1mm (other thickness is available, too); TO-258 50.8×50.8x1mm (other thickness is available, too). Other Standard Size: 25.4×25.4mm; 114.3×114.3mm; 152x152mm; 190.5x138mm … Customized sizes are available.

Aluminum Nitride (AIN) materials play a important roles in the semiconductor industry, the similarities between its thermal profile and that of silicon has made an ideal choice for wafer-related semiconductor applications. Innovacera’s Aluminum nitride wafers have high reliability of Si chip and thermal heat cycling. According to direct wafer bonding technology, polished semiconductor wafers can be bonded together without adhesives. Direct wafer bonding requires very flat and high smooth surface (Ra≤0.05um), Innovacera AlN wafers substrate can meet this requirements. Features High melting point High electrical insulation Lowdielectric constant Higher mechanical strength Superior corrosion resistance against molten metal Thermal and chemicalstability High thermal conductivity (170-220w/mk) Similar coefficient of thermal expansion to that of silicon (si)

With its properties of electrical insulation and excellent thermal conductivity, Aluminum Nitride Ceramics is ideal for applications where heat dissipation is required. In addition, since it offers a coefficient of thermal expansion (CTE) near that of silicon, and excellent plasma resistance, it is used for semiconductor processing equipment components.

BN-AlN Ceramic is made by sintering Boron Nitride (BN) and Aluminum Nitride (AIN) powder. It has excellent electrical insulator, thermal conductivity, high strength, resistance to thermal shock, and strong resistance to halogen gas plasma, which is offers a wide range of applications, including components for semiconductor production equipment and components that require effective heat dissipation. The ion source is a device that creates atomic and molecular ions, which is in the vacuum chamber. Aluminum Nitride/Boron Nitride Composite has excellent electrical insulator, thermal conductivity, sealing ability to vacuum and hasn’t given off much gas. So it is plays an heat sinks and thermal transfer plate role in ion sources. Material Advantages: High mechanical strength. High thermal conductivity. Low thermal expansion. Low dielectric loss. Excellent electrical insulation. High corrosion resistance–non-wetted by molten metals.

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features： 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features： 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features： 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features： 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features： 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).

Black High Purity Aluminum Nitride Ceramic Plate Hot pressed aluminum nitride (AlN) is used in applications requiring high electrical resistivity in additional to exceptional thermal conductivity. The applications for hot pressed AlN typically involve rigorous or abrasive environments and high-temperature thermal cycling.

Aluminum nitride ceramic thermal insulator pads are ceramic materials with outstanding properties such as high thermal conductivity and high electrical resistance. In addition, it is featured advantages such as high hardness, corrosion resistance, low dielectric constant and dielectric loss, and low CTE. Aluminum nitride ceramics have excellent thermal conductivity (7-10 times that of alumina ceramics), as the thermal expansion coefficient of silicon is similar, as a new generation of ceramic materials, more and more people pay attention to it. Regular Size： For Package Type: TO-3P / TO-220 / TO-247 / TO-264 / TO-3/TO-254/TO-257/TO-258, With Hole or Without Hole. TO – 3P, 25*20*1mm (other thickness is available, too); TO-220, 20*14*1mm (other thickness is available, too); TO-247, 22*17*0.635mm (other thickness is available, too); TO-264, 28*22*1mm (other thickness is available, too); TO-3, 39.7*26.67*1mm (Rhombus shape).

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features： 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).

Product Name:Aluminum Nitride Ceramic Substrate, AlN Ceramic Sheet Application:Often used in electrical and electronic fields requiring heat conduction, heat dissipation, insulation, high temperature resistance,high voltage breakdown resistance, high thermal conductivity, good stability. Product specifications: Conventional models are TO-220, 247, 264, 3P Range thickness: 0.25mm, 0.385mm, 0.5mm, 0.635mm, 0.8mm, 1mm, 1.5mm, 2mm, 3mm Product Advantages: Aluminum nitride ceramics have excellent thermal conductivity (7-10 times of alumina ceramics),low dielectric constant and dielectric loss, reliable insulation performance, excellent mechanical properties, non-toxic, high temperature resistance, chemical corrosion resistance, and the thermal expansion coefficient of silicon is similar, as a new generation of ceramic materials, more and more by people Attention and attention.

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to bulk up to 1380°C).

Aluminum Nitride (ALN) Ceramic Tube: The aluminum nitride (ALN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. PRODUCT PERFORMANCE: 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).

Polished Aluminum Nitride (ALN) Ceramic Rod: The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features： 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features： 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features： 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).

Hot pressed aluminum nitride (AlN) is used in applications requiring high electrical resistivity in additional to exceptional thermal conductivity. The applications for hot pressed AlN typically involve rigorous or abrasive environments and high-temperature thermal cycling.

DPC (Direct Plated Copper) Mainly by evaporation,magnetron sputtering and other surface deposition process to carry on the substrate surface metallization,first under the condition of vacuum sputtering,titanium,and then is copper particles,the plating thickness,then finish making line with ordinary PCB craft,and then to plating/electroless deposition way to increase the thickness of the line, the preparation of DPC way contains vacuum coating,wet deposition,Exposure development, etching and other processes. Advantages: >In terms of shape processing, DPC ceramic plate needs to be cut by laser, the traditional drilling and milling machine and punch machine can not be accurately processed, so the combination force and line width is also more fine. >The crystal performance of the metal is good >The flatness is good >The line is not easy to fall off >The line position is more accurate,the line distance is smaller, reliable and stable, can be through the hole and other advantages.

Aluminum nitride ceramics have excellent electrical and thermal properties, and are considered to be the most promising high thermal conductivity ceramic substrate materials. In order to seal the package structure, mount components and connect input and output terminals, the surface and interior of the aluminum nitride ceramic substrate need to be metallized. The reliability and performance of ceramic surface metallization have an important impact on the application of ceramic substrates, and firm bonding strength and excellent air tightness are the most basic requirements. Considering the heat dissipation of the substrate, it is also required to have high thermal conductivity at the interface between the metal and the ceramic. The metallization methods on the surface of aluminum nitride ceramics include: thin film method, thick film method, high melting point metallization method, electroless plating method, direct copper cladding method (DBC), etc.

AMB (Active Metal Brazing) is for joining ceramics that are not wetted by 'conventional' brazes.By applying active metal like titanium to be added to the braze alloy, to achieve chemically reacts with the surface of the parent ceramic.Due to the coefficient of thermal expansion of Al2O3 (7.1 ppm/K), Si3N4 (2.6 ppm/K) and AlN (4.7 ppm/K) is close to that of silicon (4 ppm/K), Direct Bond Copper (DBC) and AMB are suitable substrates for robust packaging of bare dice since such assemblies.AMB is the promising thick film technology which can be applied to Power Electronics, Automotive Electronics, Home Appliances, Aerospace, Others. INNOVACERA provide DBC, DPC, and AMB technology for customized ceramic substrates, welcome to consult more.

Hexagonal Boron Nitride has a microstructure similar to that of Graphite. In both materials this structure, made up of layers of tiny platelets, is responsible for excellent machinability and low-friction properties. we called hexagonal boron nitride (HBN) or white graphite. Boron nitride can be long-term used at 1800 degrees under vacuum atmosphere. With gas protection, Boron Nitride can be used at 2100°. Boron Nitride is with high thermal shock resistance, no cracks under extreme cold & high temperature. If you take out Boron Nitride from 1000 degree furnace and colding it within short minutes. It still won't break even repeat this test with 100 times. Material Properties： * High thermal conductivity * Excellent thermal shock resistance * Low thermal expansion * Exceptional heat resistance * Good Chemical Inertness * High electrical resistance * Low dielectric constant and loss tangent * High volume resistivity * Excellent machinability

AMB Ceramic Substrate is a method to realize the bonding of ceramic and metal by reacting a small amount of active elements Ti and Zr in filler metal with ceramics to form a reaction layer which can be wetted by liquid filler metal. Advantage: The combination is achieved by chemical reaction between ceramic and active metal solder paste at high temperature, so its bonding strength is higher and reliability is better. Disadvantage: The reliability of AMB process depends largely on the composition of active filler metal, brazing process, brazing layer structure and many other key factors。 Specification >Metallization thickness: 25 ±10um >Nickel thickness:2~10um; >Pin full strength: 4200kgf/cm2 avg. (at Φ3.0mm pin)

DPC Ceramic Substrate Advantages: > In terms of shape processing, DPC ceramic substrate needs to be cut by laser, the traditional drilling and milling machine and punch machine can not be accurately processed, so the combination force and line width is also more fine. > The crystal performance of the metal is good; > The flatness is good; > The line is not easy to fall off; > The line position is more accurate, the line distance is smaller, reliable and stable, can be through the hole and other advantages.

Hexagonal Boron Nitride has a microstructure similar to that of Graphite. In both materials this structure, made up of layers of tiny platelets, is responsible for excellent machinability and low-friction properties. we called hexagonal boron nitride (HBN) or white graphite. Material of Boron Nitride Ceramics: Pyrolytic Boron Nitride: 99.99% Boron Nitride* 99 Boron Nitride: Boron Nitride + Boric Oxide (B2O3) CABN: Boron Nitride + Calcium Borate ALBN: Boron Nitride + Al2BO3 ZRBN: Boron Nitride + Zirconium Oxide + Boric Oxide (B2O3) ZABN: Boron Nitride + Zirconium Oxide + Aluminum Nitride + Al2BO3 SCBN: Boron Nitride + Silicon Carbon + Al2BO3 Processing of Boron Nitride Ceramics: 1.Hot Pressed Sintering 2.Chemical Vapor Deposition

No other oxide ceramic material collectively exhibits these highly desirable properties and characteristics. BeO ceramic conducts heat more quickly than virtually all metals with the exception of copper and silver. Beryllia exhibits extremely low dielectric loss characteristics, possesses high electrical resistivity, and offers excellent strength with high specific stiffness properties. BeO provides all the desirable physical and dielectric characteristics exhibited by an aluminum oxide or aluminum nitride, in addition, offers thermal conductivity ten times higher than alumina, and fifty percent higher than aluminum nitride, a dielectric constant that is lower than both alumina and aluminum nitride, and weight per given volume that is fully a quarter less than alumina, and nearly ten percent less than aluminum nitride. As a thermally conductive and electrically insulating material, its performance is exceeded only by that of the diamond.

About Beryllium Oxide (BeO) Ceramic: No other oxide ceramic material collectively exhibits these highly desirable properties and characteristics. BeO ceramic conducts heat more quickly than virtually all metals with the exception of copper and silver. Beryllia exhibits extremely low dielectric loss characteristics, possesses high electrical resistivity, and offers excellent strength with high specific stiffness properties. BeO provides all the desirable physical and dielectric characteristics exhibited by an aluminum oxide or aluminum nitride, in addition, offers thermal conductivity ten times higher than alumina, and fifty percent higher than aluminum nitride, a dielectric constant that is lower than both alumina and aluminum nitride, and weight per given volume that is fully a quarter less than alumina, and nearly ten percent less than aluminum nitride. As a thermally conductive and electrically insulating material, its performance is exceeded only by that of the diamond.