Aluminum Nitride Wafer Substrates

Aluminum Nitride Ceramic Thermal Pads Regular Size: For Package Type: TO-3P/TO-220/TO-247/TO-264/TO-3/TO-254/TO-257/TO-258, With Hole or Without Hole. TO-3P 25x20x1mm (other thickness is available, too); TO-220 20x14x1mm (other thickness is available, too); TO-247 22x17x0.635mm (other thickness is available, too); TO-264 28x22x1mm (other thickness is available, too); TO-3 39.7×26.67x1mm (Rhombus shape); TO-254 34x24x1mm (other thickness is available, too); TO-257 40x28x1mm (other thickness is available, too); TO-258 50.8×50.8x1mm (other thickness is available, too). Other Standard Size: 25.4×25.4mm; 114.3×114.3mm; 152x152mm; 190.5x138mm … Customized sizes are available.

BN-AlN Ceramic is made by sintering Boron Nitride (BN) and Aluminum Nitride (AIN) powder. It has excellent electrical insulator, thermal conductivity, high strength, resistance to thermal shock, and strong resistance to halogen gas plasma, which is offers a wide range of applications, including components for semiconductor production equipment and components that require effective heat dissipation. The ion source is a device that creates atomic and molecular ions, which is in the vacuum chamber. Aluminum Nitride/Boron Nitride Composite has excellent electrical insulator, thermal conductivity, sealing ability to vacuum and hasn’t given off much gas. So it is plays an heat sinks and thermal transfer plate role in ion sources. Material Advantages: High mechanical strength. High thermal conductivity. Low thermal expansion. Low dielectric loss. Excellent electrical insulation. High corrosion resistance–non-wetted by molten metals.

Aluminum Nitride (ALN) Ceramic Tube: The aluminum nitride (ALN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. PRODUCT PERFORMANCE: 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).

Polished Aluminum Nitride (ALN) Ceramic Rod: The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk