C-MOSI based IR-emitter, TO46 with reflector, open

IR-emitter with low input power for high volume markets in NDIR gas analysis

Description

Cost efficient infrared emitter for NDIR gas analysis and other infrared measurement applications. With only 250 mW required input power, the emitter is also suitable for mobile - and handheld devices. The membrane of this cmOS based ire source achieves membrane temperatures up to 800 °C with long term stable radiation power and short time constant. For high volume applications such as building air conditioning, automation and others, the JSIR 340 is suitable due to its excellent price/performance ratio. The packaging with reflector is good for measurement distances from 2 cm. The MEMS emitter chip consists of a multilayer hotplate membrane containing a high temperature stable metal C-MOSI layer. The emitter chip is based on a silicon substrate with a back-etched membrane. All thin film processes are performed with standard MEMS processes and cmOS compatible materials. The active C-MOSI resistor layer is protected against aging and environment.

  • Sensors
  • emitter
  • NDIR
  • IR source

Product characteristics

Housing
TO46
Add on
reflector
Window
none
Filling gas
none
Active Area
1.0 x 1.0 mm²
Temperature min. °C
-20
Temperature max. °C
85
Technologies
C-MOSI

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Domain icon Manufacturer/ Producer

07629 Hermsdorf - Germany

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