C-MOSI based IR-emitter, TO39 with reflector, open
IR-emitter with high modulation frequency for high volume in NDIR gas analysis
Description
The cost-efficient infrared emitter JSIR340-4 is optimized for NDIR gas analysis and other infrared measurement applications such as DIR spectroscopy, ATR spectroscopy or PAS spectroscopy. The membrane of the cmOS based IR emitter reaches membrane temperatures of up to 800 °C. It provides long-term stable radiation output for industrial applications for control and monitoring of process gases, associated gases at ambient temperatures between -20 and 85 °C. The packaging version in the standard TO housing with cap is suitable for measuring distances up to 2 cm. The MEMS chip used in our IR emitters consists of a multilayer hot plate diaphragm containing a high temperature stable metal C-MOSI layer. The emitter chip has an active area of 2.2 x 2.2 mm2 and is based on a silicon substrate with a back-etched membrane. All thin film processes are performed using standard MEMS processes and cmOS compatible materials. The active C-MOSI resistive layer is protected against aging & environment.
- Sensors
- emitter
- NDIR
- IR source
Product characteristics
- Housing
- TO39
- Add on
- reflector
- Window
- none
- Filling gas
- none
- Active Area
- 2.2 x 2.2 mm²
- Temperature min. °C
- -20
- Temperature max. °C
- 85
- Technology
- C-MOSI
Documents
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