Aluminium nitride is mostly used for its outstanding ability to dissipate heat, and together with its excellent electrical and mechanical properties, it is an advanced ceramic of choice for power electronics and microelectronics applications where heat must be dissipated. Selection of materials Microcertec offers two types of sintered alumininium nitride with a thermal conductivity of 180 W/m.K minimum : tape cast AlN (substrate), pressed AlN. A machinable aluminium nitride offering a thermal conductivity of 90 W/m.K is also available : ALN Shapal M –Soft™ Properties The main features of sintered aluminium nitride (AlN) are : excellent thermal conductivity low coefficient of thermal expansion good electrical insulation and resistivity low dielectric constant mechanical strength under compression load corrosion resistance (gas) Our typical applications Aluminium nitride is a ceramic material widely used in the following applications : heat sinks for uncooled high-power...
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The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features: 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).
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Polished Aluminum Nitride (ALN) Ceramic Rod: The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. Product Features 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk
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Hot pressed aluminum nitride (AlN) is used in applications requiring high electrical resistivity in additional to exceptional thermal conductivity. The applications for hot pressed AlN typically involve rigorous or abrasive environments and high-temperature thermal cycling.
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Aluminum Nitride (ALN) Ceramic Tube: The aluminum nitride (ALN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests. PRODUCT PERFORMANCE: 1.Uniform microstructure 2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives 3.High electrical resistivity 4.Thermal expansion coefficient close to that of Silicon 5.Resistance to corrosion and erosion 6.Excellent thermal shock resistance 7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).
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